Preparation and characterization of MOCVD thin films of indium tin oxide
Identifieur interne : 014B20 ( Main/Repository ); précédent : 014B19; suivant : 014B21Preparation and characterization of MOCVD thin films of indium tin oxide
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Abstract
Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature Films with a resistivity of 7.2 × 10 4 Ω cm, a visible transmission of over 80%. and a direct optical energy gap of 3.76 eV were deposited.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Preparation and characterization of MOCVD thin films of indium tin oxide</title><author><name sortKey="Akinwunmi, O O" uniqKey="Akinwunmi O">O. O. Akinwunmi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Obafemi Awolowo University</s1><s2>He-Ife</s2><s3>NGA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Nigeria</country><wicri:noRegion>He-Ife</wicri:noRegion></affiliation></author><author><name sortKey="Eleruja, M A" uniqKey="Eleruja M">M. A. Eleruja</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Obafemi Awolowo University</s1><s2>He-Ife</s2><s3>NGA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Nigeria</country><wicri:noRegion>He-Ife</wicri:noRegion></affiliation></author><author><name sortKey="Olowolafe, J O" uniqKey="Olowolafe J">J. O. Olowolafe</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of Delawale</s1><s2>Newark, DE 19901</s2><s3>USA</s3><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19901</wicri:noRegion></affiliation></author><author><name sortKey="Adegboyega, G A" uniqKey="Adegboyega G">G. A. Adegboyega</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic and Electrical Engineering, Obafemi Awolowo Uiversity</s1><s2>He-Ife</s2><s3>NGA</s3><sZ>4 aut.</sZ></inist:fA14><country>Nigeria</country><wicri:noRegion>He-Ife</wicri:noRegion></affiliation></author><author><name sortKey="Ajayi, E O B" uniqKey="Ajayi E">E. O. B. Ajayi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Obafemi Awolowo University</s1><s2>He-Ife</s2><s3>NGA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Nigeria</country><wicri:noRegion>He-Ife</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0049259</idno><date when="1999">1999</date><idno type="stanalyst">PASCAL 00-0049259 INIST</idno><idno type="RBID">Pascal:00-0049259</idno><idno type="wicri:Area/Main/Corpus">013D28</idno><idno type="wicri:Area/Main/Repository">014B20</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-3467</idno><title level="j" type="abbreviated">Opt. mater. : (Amst.)</title><title level="j" type="main">Optical materials : (Amsterdam)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electrical conductivity</term><term>Energy gap</term><term>Experimental study</term><term>Indium oxides</term><term>MOCVD</term><term>Optical transmission</term><term>Preparation</term><term>Ternary compounds</term><term>Thin films</term><term>Tin oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Méthode MOCVD</term><term>Couche mince</term><term>Indium oxyde</term><term>Etain oxyde</term><term>Composé ternaire</term><term>Conductivité électrique</term><term>Transmission optique</term><term>Bande interdite</term><term>Préparation</term><term>7820C</term><term>7350D</term><term>8115G</term><term>In O Sn</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature Films with a resistivity of 7.2 × 10 <sup>4</sup> Ω cm, a visible transmission of over 80%. and a direct optical energy gap of 3.76 eV were deposited.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-3467</s0></fA01><fA03 i2="1"><s0>Opt. mater. : (Amst.)</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Preparation and characterization of MOCVD thin films of indium tin oxide</s1></fA08><fA11 i1="01" i2="1"><s1>AKINWUNMI (O. O.)</s1></fA11><fA11 i1="02" i2="1"><s1>ELERUJA (M. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>OLOWOLAFE (J. O.)</s1></fA11><fA11 i1="04" i2="1"><s1>ADEGBOYEGA (G. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>AJAYI (E. O. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Obafemi Awolowo University</s1><s2>He-Ife</s2><s3>NGA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering, University of Delawale</s1><s2>Newark, DE 19901</s2><s3>USA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electronic and Electrical Engineering, Obafemi Awolowo Uiversity</s1><s2>He-Ife</s2><s3>NGA</s3><sZ>4 aut.</sZ></fA14><fA20><s1>255-259</s1></fA20><fA21><s1>1999</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22598</s2><s5>354000080948240080</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0049259</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optical materials : (Amsterdam)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature Films with a resistivity of 7.2 × 10 <sup>4</sup> Ω cm, a visible transmission of over 80%. and a direct optical energy gap of 3.76 eV were deposited.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50D</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>MOCVD</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etain oxyde</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Tin oxides</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Transmission optique</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Optical transmission</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Transmisión óptica</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Bande interdite</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Energy gap</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Préparation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Preparation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Preparación</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>7820C</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>7350D</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4><s5>58</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>In O Sn</s0><s4>INC</s4><s5>92</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>16</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>16</s5></fC07><fN21><s1>031</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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